2SC3072

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=20V(Min) ·DCCurrentGain- :hFE=140(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

2SC3072

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=20V(Min) ·DCCurrentGain- :hFE=140(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

2SC3072

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC3072

StrobeFlashApplicationsMediumPowerAmplifierApplications

2SC3072

SiliconNPNEpitaxial

Features •HighDCcurrentgain. •Lowcollectorsaturationvoltage. •Highpowerdissipation.

2SC3072

TRANSISTOR(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •HighDCcurrentgain :hFE=140to450(VCE=2V,IC=0.5A) :hFE=70(min)(VCE=2V,IC=4A) •Lowcollectorsaturationvoltage :VCE(sat)=1.0V(max)(IC=4A,IB=0.1A) •Highpowerdi