NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC2932 is a silicon NPN epitaxial planar type transistor specifically designed for power amplifiers applications in 800 - 940 MHz UHF band. APPLICATION RF power amplifier applications in 800 to 940 MHz mobile radio set.

文件：100.72 Kbytes 页数：2 Pages

Mitsubishi

三菱电机

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC2933 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers applications in 800 ~ 940MHz band. APPLICATION Output stage of power amplifiers in 800MHz band mobile radio equipment

文件：126.76 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High VCEO • Low COB APPLICATIONS • For TV video output amplification

文件：113.5 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High VCEO • Low COB APPLICATIONS • For TV video output amplification

文件：99.85 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION · With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications

文件：116.02 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications

文件：74.48 Kbytes 页数：3 Pages

ISC

无锡固电

POWER TRANSISTORS(10A,400V,100W)

SWITCHMODE SERIES NPN POWER TRANSISTORS ... designed for use in high-voltage, high-speed, power switching applications such as switching regulators, inverters, and converter. FEATURES * Collector-Emitter Sustaining Voltage - VCEO(sus) = 400 V (Min) * Collector-Emitter Saturation Voltage -

文件：120.29 Kbytes 页数：3 Pages

MOSPEC

统懋

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Sustaining Voltage : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed and high power applications.

文件：414.14 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • Switching power transistor • High breakdown voltage APPLICATIONS • For switching regulator applications

文件：74.48 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEo(sus)= 400V(Min) • Fast Switching Speed APPLICATIONS • Designed for use in high-voltage, high-speed, power switching applications.

文件：129.18 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司