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2SC2901	文件：159.49 Kbytes Page：3 Pages	NPNSILICONTRANSISTOR DESCRIPTION The2SC2901isdesignedforgeneralpurposeamplifierandhighspeedswitchingapplications. FEATURES ●HighFrequencyCurrentGain. ●HighSpeedSwitching. ●SmallOutputCapacitance.	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
ST2SC2901	文件：258.16 Kbytes Page：4 Pages	NPNSiliconEpitaxialPlanarTransistor NPNSiliconEpitaxialPlanarTransistor forgeneralpurposeamplifierandhighspeed switchingapplications. ThetransistorissubdividedintotwogroupsLandK, accordingtoitsDCcurrentgain. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations. Fea	SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司	SEMTECH_ELEC

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2SC2901

文件：159.49 Kbytes

Page：3 Pages

NPNSILICONTRANSISTOR

DESCRIPTION The2SC2901isdesignedforgeneralpurposeamplifierandhighspeedswitchingapplications. FEATURES ●HighFrequencyCurrentGain. ●HighSpeedSwitching. ●SmallOutputCapacitance.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

ST2SC2901

文件：258.16 Kbytes

Page：4 Pages

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forgeneralpurposeamplifierandhighspeed switchingapplications. ThetransistorissubdividedintotwogroupsLandK, accordingtoitsDCcurrentgain. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations. Fea

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC

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