Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO=100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.0V(Max) @IC=3A, IB=0.3A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

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ISC

无锡固电

High-Voltage Switching, AF 60W Predriver Applications

High-Voltage Switching AF 60W Predriver Applications Features • Adoption of FBET process. • High breakdown voltage. • Excellent linearity of hFE and small Cob. • Fast switching speed.

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SANYO

三洋

Silicon NPN Power Transistors

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SAVANTIC

Silicon NPN Power Transistor

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

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SAVANTIC

Trans GP BJT NPN 15V 0.2A 3-Pin TO-92

NJS

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE

MITSUBISHI

三菱电机