Silicon NPN Epitaxial Transistor

FEATURES ● Small flat package. ● Low saturation voltage VCE(sat)=-0.5V ● High speed switching time ● Complementary to 2SA1213 APPLICATIONS ● Power amplifier ● Power Switching

文件：219.4 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213 APPLICATIONS ● Power Amplifier and Switching

文件：413.68 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

Silicon PNP Epitaxial Type

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

文件：63.62 Kbytes 页数：2 Pages

KEXIN

科信电子

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation voltage ● High speed switching time ● Complementary to 2SA1213

文件：219.4 Kbytes 页数：3 Pages

SECOS

喜可士

SOT-89 Plastic-encapsulate NPN Transistors

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

文件：1.65238 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

丝印：MO；Package：SOT-89；Silicon NPN Epitaxial Transistor

FEATURES Small flat package. Low saturation voltage VCE(sat)=-0.5V High speed switching time Complementary to 2SA1213 APPLICATIONS Power amplifier Power Switching

文件：511.16 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：163.07 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SA1213. Applications Power amplifier and switching applications.

文件：896.41 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

NPN Transistors

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

文件：562.58 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Transistors

FEATURES • Small flat package. • Low saturation voltage VCE(sat)=-0.5V • High speed switching time • PC=1.0 to 2.0W • Complementary to 2SA1213

文件：204.68 Kbytes 页数：2 Pages

HOTTECH

合科泰