首页 >2SC2712-Y.LF(T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconEpitaxialPlanarTransistor | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
SiliconNPNtransistorinaSOT-23PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
iscSiliconNPNPowerTransistor DESCRIPTION •WithSOT-23packaging •Highcollector-basevoltage •Highpowerdissipation •Lowsaturationvoltage •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconEpitaxialPlanarTransistor | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
NPNEPITAXIALSILICONTRANSISTOR PRF-AMPLIFIER,LOWLEVEL&LOWNOISE ●Complemento2SA1037 ●Collector-current:Ic=100mA ●Collector-EmillerVoltage:VCE=45V ●HighTotalpowerDissipationPc=225mW ●HighlifeAndGoodLinearity | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
Plastic-EncapsulateTransistors FEATURES LowNoise:NF=1dB(Typ),10dB(MAX) Complementaryto2SA1162 | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | HOTTECH | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) Features ●AudioFrequencyGeneralPurposeAmplifierApplications ●LowNoise:NF=1dB(Typ),10dB(MAX) ●Complementaryto2SA1162 | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | HDSEMI | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURE •LowNoise:NF=1dB(Typ),10dB(MAX) •Complementaryto2SA1162 •AudioFrequencyGeneralPurposeAmplifierApplications | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
Plastic-EncapsulateTransistors | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三联盛科技股份深圳市三联盛科技股份有限公司 | SHENZHENSLS | ||
SOT-23BIPOLARTRANSISTORSTRANSISTOR(PNP) | RECTRON Rectron Semiconductor | RECTRON |
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