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2SC2655

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:900mW(Tamb=25℃) Collectorcurrent ICM:2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

2SC2655

SiliconNPNtransistorinaTO-92LMPlasticPackage

Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features Lowsaturationvoltage,highspeedswitchingtime,complementaryto2SA1020. Applications Poweramplifierandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

2SC2655

TRANSISTOR(NPN)

FEATURES ●Lowsaturationvoltage:VCE(sat)=0.5V(Max)(IC=1A) ●Highspeedswitchingtime:tstg=1μs(Typ.) ●Complementaryto2SA1020

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

2SC2655

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

UTCUnisonic Technologies

友顺友顺科技股份有限公司

2SC2655

iscSiliconNPNPowTransistor

DESCRIPTION •SiliconNPNepitaxialtype •Lowsaturationvoltage •Complementaryto2SA1020 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Poweramplifierapplications •Powerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SC2655

TO-92LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) ●HighSpeedSwitchingTime:tstg=1μs(Typ.) ●Complementaryto2SA1020

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

2SC2655

NPNPlasticEncapsulatedTransistor

FEATURES -Lowsaturationvoltage:VCE(sat)=0.5V(Max)(IC=1A) -Highspeedswitchingtime:tstg=1μs(Typ.) -Complementaryto2SA1020

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC2655

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

UTCUnisonic Technologies

友顺友顺科技股份有限公司

2SC2655

NPNGeneralPurposeTransistors

NPNGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

2SC2655

SiliconNPNEpitaxialType(PCTProcess)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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