SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Large current capacitance in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.3 V MAX. (IC = 3.0 A) • Ideal for use in a lamp driver • Complementary transi

文件：250.95 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA1129 ·Low collector saturation votage APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

文件：103.08 Kbytes 页数：3 Pages

SAVANTIC

NPN Plastic Encapsulated Transistor

FEATURES - Low saturation voltage：VCE(sat)=0.5V(Max)(IC=1A) - High speed switching time：tstg=1μs(Typ.) - Complementary to 2SA1020

文件：217.8 Kbytes 页数：3 Pages

SECOS

喜可士

丝印：C2655；Package：TO-92MOD；TO-92MOD Plastic-Encapsulate Transistors

FEATURES Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) High Speed Switching Time: tstg=1μs(Typ.) Complementary to 2SA1020

文件：1.56524 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：125.97 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

TRANSISTOR (NPN)

FEATURES ● Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) ● High speed switching time: tstg=1μs(Typ.) ● Complementary to 2SA1020

文件：277.17 Kbytes 页数：3 Pages

KOOCHIN

灏展电子

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

文件：282.69 Kbytes 页数：2 Pages

WEITRON

isc Silicon NPN Pow Transistor

DESCRIPTION • Silicon NPN epitaxial type • Low saturation voltage • Complementary to 2SA1020 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications • Power switching applications

文件：255.22 Kbytes 页数：2 Pages

ISC

无锡固电

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) ● High Speed Switching Time: tstg=1μs(Typ.) ● Complementary to 2SA1020

文件：3.69215 Mbytes 页数：5 Pages

JIANGSU

长电科技

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1020.

文件：179.48 Kbytes 页数：4 Pages

TOSHIBA

东芝