丝印：CP；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES • Power dissipation: PCM=200mW APPLICATIONS • NPN Silicon Epitaxial Planar Transistor

文件：436.74 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISOR(NPN)

FEATURES • High ICMax.ICMax. = 0.5mA • Low VCE(sat).Optimal for low voltage operation. • Complements the 2SA1036

文件：648.9 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ● High ICMax.ICMax. = 0.5mA ● Low VCE(sat).Optimal for low voltage operation. ● Complements the 2SA1036

文件：1.58818 Mbytes 页数：4 Pages

JIANGSU

长电科技

NPN Transistor Plastic-Encapsulate Transi stors

FEATURES 1. Power Dissipation PCM : 200 mW ( Tamb= 25 C) 2. RoHS Compliant Product

文件：230.29 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：CP/CQ/CR；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation: PCM=200Mw. ● High ICM(MAX.),I CM(MAX.)=0.5mA. ● Low VCE(sat)。 ● Complements the 2SA1036. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

文件：1.09277 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

SOT-23 Plastic-Encapsulate Transistors

FEATURES High ICMax.ICMax. = 500mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036

文件：1.56019 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Plastic-Encapsulate Transistors

FEATURES • High ICMax.ICMax. = 0.5mA • Low VCE(sat).Optimal for low voltage operation. • Complements the 2SA1036

文件：189.66 Kbytes 页数：2 Pages

HOTTECH

合科泰

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：129.6 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Large IC,low VCE(sat),complementary pair with the 2SA1036K. Applications Medium power amplifier applications.

文件：730.02 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 32 Volts POWER 225mW FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • In compliance with EU RoHS 2002/95/EC directives

文件：359.42 Kbytes 页数：4 Pages

PANJIT

強茂