TO-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：519.659 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● Power Dissipation PCM: 0.75 W (Ta=25℃) ● Low Saturation Voltage (VCE(sat)=0.15V at 500mA) ● Complementary Pair with 2SA934

文件：5.84376 Mbytes 页数：3 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：122.46 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features High PC, low collector saturation voltage, complementary pair with 2SA934. Applications 1~2W low frequency amplifiers.

文件：936.06 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：55.76 Kbytes 页数：1 Pages

TEL

edium Power Amp. Epitaxial Planar NPN Silicon Transistor

Features 1) High breakdown voltage: VCEO=80V 2) Large current capacity: Ic=700mA

文件：247.67 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：TP；Package：SPT；High-gain Amplifier Transistor ( 32V, 0.3A)

Features 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE= 3V, IC = 0.1A.) 2) High input impedance.

文件：70.11 Kbytes 页数：3 Pages

ROHM

罗姆

TRANSISTOR NPN EPITAXIAL PLANAR

Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics.

文件：247.63 Kbytes 页数：1 Pages

ROHM

罗姆

RF Amplifier Epitaxial Planar NPN Silicon Transistors

Features 1) Small collector capacitance: Cob = 1.6pF (Typ.) 2) Low base resistance and high gain for good noise response.

文件：309.55 Kbytes 页数：4 Pages

ROHM

罗姆

SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)

COLOR TV CHROMA OUTPUT APPLICATION FEATURES High Voltage : VCEO = 300V Small Collector output Capcitance : Cob=4.0 pF (max.)

文件：70.77 Kbytes 页数：2 Pages

TOSHIBA

东芝