首页 >2SC1815-Y其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | KOOCHIN | ||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●Powerdissipation | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
NPNEpitaxialPlanarTansistor NPNEpitaxialPlanarTansistor | FCIFirst Components International 戈采戈采企业股份有限公司 | FCI | ||
iscSiliconNPNTransistor DESCRIPTION •HighVoltageandHighCurrent Vceo=50V(Min.),Ic=150mA(Max) •ExcellenthFELinearity •LowNoise •ComplementtoType2SA1015(O,Y,GRclass) APPLICATIONS •AudiofrequencygeneralpurposeamplifierApplications •Driverstageamplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
AudioFrequencyGeneralPurposeAmplifierApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SiliconEpitaxialPlanarTransistor FEATURES ●Highvoltageandhighcurrent VCEO=50V(Min),IC=150mA(Max). ●ExcellenthFElinearity:hFE(2)=100(Typ)atVCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA=0.95(Typ)) ●Lownoise. ●Complementaryto2SA1015. APPLICATIONS ●Audiofrequencyg | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
iscSiliconNPNTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconEpitaxialPlanarTransistor FEATURES ●Highvoltageandhighcurrent VCEO=50V(Min),IC=150mA(Max). ●ExcellenthFElinearity: hFE(2)=100(Typ)atVCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA=0.95(Typ)) ●Lownoise. ●Complementaryto2SA1015. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplicati | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●Powerdissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
