首页 >2SC1627-O(F)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconNPNEpitaxialType(PCTprocess) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TRANSISTOR(DRIVERSTAGE,VOLTAGEAMPLIFIERAPPLICATIONS) DriverStageAmplifierApplications VoltageAmplifierApplications •Complementaryto2SA817 •Driverstageapplicationof20to25wattsamplifiers. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TO-92MODPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURE ●Complementaryto2SA817A ●DriverStageApplicationof30to35WattsAmplifiers | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.8W(Tamb=25℃) Collectorcurrent ICM:0.4A Collector-basevoltage V(BR)CBO:80V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | WINNERJOIN | ||
TRANSISTOR(NPN) FEATURE ●Complementaryto2SA817A ●DriverStageApplicationof30to35WattsAmplifiers | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | KOOCHIN | ||
SiliconNPNtransistorinaTO-92LMPlasticPackage Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features Driverstageof30to35wattsapplication,complementarypairwith2SA817A. Applications Driverstageof30to35wattsapplication,complementarypairwith2SA817A. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
TRANSISTOR(ERIVERSTAGE,VOLTAGEAMPLIFIERAPPLICATIONS) Driver-StageAmplifierApplications VoltageAmplifierApplications •Complementaryto2SA817A. •Driver-stageapplicationsfor30-to35-wattamplifiers. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.8W(Tamb=25℃) Collectorcurrent ICM:0.4A Collector-basevoltage V(BR)CBO:80V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
SiliconNPNEpitaxialType(PCTProcess) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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