首页 >2SC1623三极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconEpitaxialPlanarTransistor FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
NPNSiliconEpitaxialTransistors Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation) | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
NPNGeneralPurposeTransistors Lead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD FEATURES •HighDCCurrentGain:hFE=200TYP. (VCE=6.0V,IC=1.0mA) •HighVoltage:VCEO=50V | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforaudiofrequencyamplifierapplications. | DCCOM Dc Components | DCCOM | ||
NPNEpitaxialPlanarTransistor DESCRIPTION The2SC1623isdesignedforusedriverstageofAFamplifierandgeneralpurposeapplication. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
NPNSiliconTransistor Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
HighDCcurrentgainhFE200(Typ)VCE6V,IC1mA FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司 | MAKOSEMI |
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