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2SB772PT

PNPEpitaxialTransistor

VOLTAGE30Volts CURRENT3Ampere FEATURE *Smallflatpackage.(SC-62/SOT-89) *LowsaturationvoltageVCE(sat)=-0.5V(max.)(IC=-2A) *Highspeedswitchingtime:tstg=1.0uSec(typ.) *PC=1.5W(mountedonceramicsubstrate). *Highsaturationcurrentcapability. CONSTRUCTION *PNPSw

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

2SB772Q

PNPSiliconMediumPowerTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SB772-Q

PNPTransistors

■Features ●PNPtransistorHighcurrentoutputupto3A ●LowSaturationVoltage ●Complementto2SD882

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

2SB772-Q

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SB772-R

PNPSiliconPlastic-EncapsulateTransistor

Features •LeadFreeFinish/RoHSCompliant(Note1) (PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1.25WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage40V •

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SB772-R

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SB772-R

PNPTransistors

■Features ●PNPtransistorHighcurrentoutputupto3A ●LowSaturationVoltage ●Complementto2SD882

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

2SB772-R

PNPSiliconPlastic-EncapsulateTransistor

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SB772S

MEDIUMPOWERLOWVOLTAGETRANSISTOR

MEDIUMPOWERLOWVOLTAGETRANSISTOR DESCRIPTION TheUTC2SB772Sisamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage *Complementto2SD882S

UTCUnisonic Technologies

友顺友顺科技股份有限公司

2SB772S

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description Designedforuseinoutputstageof0.75Waudioamplifier,voltageregulator,DC-DCconverterandrelaydriver.

DCCOM

Dc Components

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