| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD726 LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD726 文件：38.34 Kbytes 页数：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD727 APPLICATIONS • Designed for low frequency power amplifier and power switching applications. 文件：242.27 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD727 APPLICATIONS • Designed for low frequency power amplifier and power switching applications. 文件：134.84 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Wide area of safe operation APPLICATIONS • For low frequency power amplifier and power switching applications 文件：134.63 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD731 APPLICATIONS • Designed for power amplifier and general purpose applications. 文件：134.55 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Wide area of safe operation APPLICATIONS • For power amplifier and general purpose applications 文件：134.63 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC | ||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD731 APPLICATIONS • Designed for power amplifier and general purpose applications. 文件：242.28 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
isc Silicon PNP Power Transistors DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SD732 APPLICATIONS • Designed for AF power amplifier applications. • Recommended for output stage of 60W power amplifier. 文件：222.29 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • Power amplifier applications • Recommended for high-power high-fidelity audio frequency amplifier output stage 文件：113.06 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon PNP Power Transistors DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-120V(Min) • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SD732 APPLICATIONS • Designed for AF power amplifier applications. • Recommended for output stage of 60W power amplifier. 文件：130.919 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-PNP
- 性质：
通用型 （Uni）_LO_SAT
- 封装形式：
直插封装
- 极限工作电压：
25V
- 最大电流允许值：
0.7A
- 最大工作频率：
250MHZ
- 引脚数：
3
- 可代换的型号：
BC328,BC728,2SA1703,2SB892,2SB926,2SB927,3CA1A,
- 最大耗散功率：
0.6W
- 放大倍数：
- 图片代号：
A-20
- vtest：
25
- htest：
250000000
- atest：
0.7
- wtest：
0.6
详细参数
- 型号：
2SB69
- 功能描述：
Bipolar Junction Transistor, PNP Type, TO-92
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
90000 |
询价 | |||||
三洋 |
24+ |
TO92 |
5000 |
只做原装公司现货 |
询价 | ||
三洋 |
24+ |
TO-92 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
三洋 |
23+ |
TO92 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SANYO |
23+ |
2800 |
正品原装货价格低 |
询价 | |||
三洋 |
24+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SANYO/三洋 |
23+ |
TO-92 |
45000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
SANYO |
4 |
AMMO(TO-92) |
2100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SANYO |
23+ |
NA |
20000 |
全新原装假一赔十 |
询价 | ||
SANYO/三洋 |
25+ |
TR |
880000 |
明嘉莱只做原装正品现货 |
询价 |
