首页 >2SB1481其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)cEo=-100V(Min) •HighDCCurrentGain- :hFE=2000(Min)@(VCE=-2V,lc=-1.5A) •LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(lc=-3A,IB=-6mA) •ComplementtoType2SD2241 APPLICATIONS •Highpowerswitching | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconPNPPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-100V(Min) ·HighDCCurrentGain- :hFE=2000(Min)@(VCE=-2V,IC=-1.5A) ·LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(IC=-3A,IB=-6mA)B ·ComplementtoType2SD2241 APPLICATIONS ·H | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SD2241 ·HighDCcurrentgain. ·Lowsaturationvoltage. ·DARLINGTON APPLICATIONS ·Forpoweramplifierapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconPNPEpitaxialType | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TRANSISTOR(SWITCHINGAPPLICATIONS) SwitchingApplications •HighDCcurrentgain:hFE=2000(min)(VCE=−2V,IC=−1.5A) •Lowsaturationvoltage:VCE(sat)=−1.5V(max)(IC=−3A) •Complementaryto2SD2241 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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