2SB1386

LowFrequencyTransistor

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

2SB1386

Lowfrequencytransistor(−20V,−5A)

2SB1386

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

2SB1386

EpitaxialPlanarTransistorPNPSilicon

EpitaxialPlanarTransistor PNPSilicon

2SB1386

LowFrequencyTransistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

2SB1386

LOWFREQUENCYPNPTRANSISTOR

2SB1386

PNPSiliconLowFrequencyTransistor

2SB1386

TRANSISTOR(PNP)

FEATURES ●Lowcollectorsaturationvoltage, ●Execllentcurrent-to-gaincharacteristics

2SB1386

PNPSiliconLowFrequencyTransistor

FEATURES ●LowVCE(sat) ●ExcellentDCcurrentgaincharacteristics ●Complementsthe2SD2098

2SB1386

Plastic-EncapsulateTransistors

FEATURES •Lowcollectorsaturationvoltage, •Execllentcurrent-to-gaincharacteristics