首页 >2SB1386-R-TP-HF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LowFrequencyTransistor Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
Lowfrequencytransistor(−20V,−5A) | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
LOWFREQUENCYPNPTRANSISTOR ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
EpitaxialPlanarTransistorPNPSilicon EpitaxialPlanarTransistor PNPSilicon | WEITRON Weitron Technology | WEITRON | ||
LowFrequencyTransistor(-20V,-5A) Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166. | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
LOWFREQUENCYPNPTRANSISTOR | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
PNPSiliconLowFrequencyTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
TRANSISTOR(PNP) FEATURES ●Lowcollectorsaturationvoltage, ●Execllentcurrent-to-gaincharacteristics | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
PNPSiliconLowFrequencyTransistor FEATURES ●LowVCE(sat) ●ExcellentDCcurrentgaincharacteristics ●Complementsthe2SD2098 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
Plastic-EncapsulateTransistors FEATURES •Lowcollectorsaturationvoltage, •Execllentcurrent-to-gaincharacteristics | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | HOTTECH |
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