功率三极管

ST

意法半导体

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • Collector Power Dissipation- : PC= 25W@ Tc= 25°C • Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@ (lc= -3A, IB= -0.3A) • Complement to Type 2SD2060 APPLICATIONS • Designed for general purpose applications.

文件：127.26 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

文件：244.73 Kbytes 页数：4 Pages

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2060 • Low collector saturation voltage: VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • With general purpose applications

文件：170.75 Kbytes 页数：4 Pages

ISC

无锡固电