首页 >2SB1308-R-TP-HF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TRANSISTOR FEATURES ●PowerTransistor ●ExcellentDCcurrentGain ●LowCollector-emitterSaturationVoltage | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
PowerTransistor ■Features ●PowerTransistor ●ExcellentDCcurrentGain ●LowCollector-emitterSaturationVoltage | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-3A Collector-basevoltageV(BR)CBO:-30V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
PowerTransistor(-50V,-3A) Features 1)Lowsaturationvoltage,typically VCE(sat)=−0.45V(Max.)atIC/IB=−1.5A/−0.15A. 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD1963. | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●PowerTransistor ●ExcellentDCcurrentGain ●LowCollector-emitterSaturationVoltage | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
SOT-89Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●PowerTransistor ●ExcellentDCcurrentGain ●LowCollector-emitterSaturationVoltage ●Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | WILLAS | ||
TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-3A Collector-basevoltageV(BR)CBO:-30V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | WINNERJOIN | ||
PowerTransistor FEATURES ●Lowsaturationvoltage,typicallyVCE(sat)=-0.45(Max)atIC/IB=-1.5A/-0.15A ●ExcellentDCcurrentgaincharacterisitics. ●Complementarythe2SD1963. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
PowerTransistor(-50V,-3A) FEATURES Lowsaturationvoltage,typically VCE(sat)=-0.45(Max)atIC/IB=-1.5A/-0.15A ExcellentDCcurrentgaincharacterisitics. Complementarythe2SD1963. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:ICM=-3A •Collector-basevoltage:V(BR)CBO | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC |
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