首页 >2SB1261-TP(MCC)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SILICONPOWERTRANSISTOR | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
PNPSiliconEpitaxialTransistor ■Features ●HighhFEhFE=100to400 ●LowVCE(sat)VCE(sat)≤0.3V | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
PNPSILICONEPITAXIALTRANSISTORMP-3 DESCRIPTION The2SB1261-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighhFEhFE=100to400 •LowVCE(sat)VCE(sat)≤0.3V | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
iscSiliconPNPPowerTransistors DESCRIPTION •LowCollectorSaturationVoltage •HighPowerDissipation- :PC=10W(Max)@TC=25℃ •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinaudioamplifierandswitching, especiallyinhybridintegratedcir | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN |
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