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2SB1260T100Q

PowerTransistor(??0V,??A)

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

ROHMRohm

罗姆罗姆半导体集团

2SB1260T100R

PowerTransistor(??0V,??A)

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

ROHMRohm

罗姆罗姆半导体集团

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