2SB1260L-Q-AB3-R数据表ic资料供应代理友顺-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SB1260L-Q-AB3-R	文件：57.69 Kbytes Page：4 Pages	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) 文件：57.69 Kbytes 页数：4 Pages	UTC 友顺	UTC
2SB1260L-Q-AB3-B	文件：57.69 Kbytes Page：4 Pages	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) 文件：57.69 Kbytes 页数：4 Pages	UTC 友顺	UTC
2SB1260L-Q-AB3-K	文件：57.69 Kbytes Page：4 Pages	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) 文件：57.69 Kbytes 页数：4 Pages	UTC 友顺	UTC
2SB1261-AZ-E1	文件：0 bytes Page：0 Pages	RENESAS TO251	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
2SB1261-Z-E1-AZ	文件：0 bytes Page：0 Pages	RENESAS TO252	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS

更多2SB1260L-Q-AB3-R供应商更新时间2025-10-5 11:00:00