2SB1260

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

2SB1260

POWERTRANSISTOR

POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT)

2SB1260

PowerTransistor(−80V,−1A)

2SB1260

PNPPlastic-EncapsulateTransistor

PNPPlastic-EncapsulateTransistor P/bLead(Pb)-Free

2SB1260

PowerTransistor

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

2SB1260

-1A,-80VPNPPlasticEncapsulatedTransistor

FEATURES ♦HighbreakdownvoltageandhighcurrentBVCEO=-80V,IC=-1A ♦GoodhFElinearity ♦Complementsto2SD1898

2SB1260

PowerTransistor(-80V,-1A)

2SB1260

POWERTRANSISTOR

2SB1260

PowerTransistor

Features ●Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A ●GoodhFElinearity. ●LowVCE(sat). ●Epitaxialplanartype ●PNPsilicontransistor

2SB1260

TRANSISTOR(PNP)

FEATURES ●PowerTransistor ●HighVoltageandCurrent ●LowCollector-emittersaturationvoltage ●Complementsthe2SD1898