首页 >2SB1218A-Q(TX)+>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconPNPEpitaxialPlanarType Features •HighforwardcurrenttransferratiohFE. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
SiliconPNPepitaxialplanertype Forgeneralamplification Complementaryto2SD1819A ■Features ●HighfowardcurrenttransferratiohFE. ●S-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking. | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
TRANSISTOR(PNP) FEATURES Powerdissipation PCM:150mW(Tamb=25℃) Collectorcurrent ICM:-100mA Collector-basevoltage V(BR)CBO:-45V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
SiliconPNPtransistorinaSOT-323PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
PNPSiliconEpitaxialPlanarTransistor | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
SOT-323Plastic-EncapsulateTransistors | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
TRANSISTOR(PNP) FEATURES •HighDCCurrentGain •Complementaryto2SD1819A APPLICATIONS •GeneralPurposeAmplification | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:150mW(Tamb=25℃) Collectorcurrent ICM:-100mA Collector-basevoltage V(BR)CBO:-45V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
PNPSiliconEpitaxialPanerTransistors FEATURES •HighDCCurrentGain •Complementaryto2SD1819A APPLICATIONS •GeneralPurposeAmplification | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
SOT-323Plastic-EncapsulateTransistors FEATURES HighDCCurrentGain Complementaryto2SD1819A APPLICATIONS GeneralPurposeAmplification | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ |
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