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2SB1197

SiliconEpitaxialPlanarTransistor

FEATURES ●Smallsurfacemountingtype. ●Corredtorpeakcurrent(Max.=1000mA). ●Suitableforhighpackingdensity. ●Lowvoltage(Max.=40v). ●Highsaturationcurrentcapability. ●Voltagecontrolledsmallsignalswitch. APPLICATIONS ●Telephoneandprofessionalcommunicationequipment. ●

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

2SB1197

PNPEpitaxialPlanarTransistor

FEATURES •LowVCE(sat).VCE(sat)≦-0.5V(IC/IB=-0.5A/-50mA) •IC=-0.8A •Complementsofthe2SD1781

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SB1197

PNPSiliconEpitaxialTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •SmallPackage •Mounting:anyposition •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SB1197

PNPEpitaxialPlanarTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SB1197

TRANSISTOR(PNP)

FEATURES •LowVCE(sat).VCE(sat)

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

2SB1197

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •LowVCE(sat).VCE(sat)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

2SB1197

LowFrequencyTransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

2SB1197

Telephoneandprofessionalcommunicationequipment.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

2SB1197

SiliconEpitaxialPlanarTransistor

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

2SB1197/K-Q

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

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