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2SB1184-Q

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SB1184-Q

PNPPlasticEncapsulatedTransistor

FEATURES ●Designedforgeneral ●LowVCE(sat)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SB1184-Q

PNPSiliconEpitaxialTransistors

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SB1184-Q

PNPSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LowCollectorSaturationVoltage •Execllentcurre

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SB1184-R

PNPSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LowCollectorSaturationVoltage •Execllentcurre

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SB1184-R

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SB1184-R

PNPPlasticEncapsulatedTransistor

FEATURES ●Designedforgeneral ●LowVCE(sat)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SB1184-R

PNPSiliconEpitaxialTransistors

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SB1184TLQ

PowerTransistor(-60V,-3A)

ROHMRohm

罗姆罗姆半导体集团

2SB1184TLR

LowVCE(sat).VCE(sat)=-0.5V(Typ.)(IC/IB=-2A/-0.2A),Complementsthe2SD1760/2SD1864.

Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1760/2SD1864. Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

罗姆罗姆半导体集团

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