首页 >2SB1182R-T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Mediumpowertransistor(-32V,-2A) ●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
MediumpowerTransistor(32V,2A) Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
TO-252-2L(4R)Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES PowerDissipation | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
Mediumpowertransistor(32V,2A) Mediumpowertransistor(−32V,−2A) Features 1)LowVCE(sat). VCE(sat)=−0.5V(Typ.) (IC/IB=−2A/−0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Mediumpowertransistor(32V,2A) Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complements2SD1758/2SD1862. | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
MEDIUMPOWERLOWVOLTAGETRANSISTOR DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
MediumPowerTransistor FEATURES ●LowVCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) ●Complementsthe2SD1758 APPLICATIONS ●Epitaxialplanartype. ●PNPsilicontransistor. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
Mediumpowertransistor(32V,2A) Mediumpowertransistor(−32V,−2A) Features 1)LowVCE(sat). VCE(sat)=−0.5V(Typ.) (IC/IB=−2A/−0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
iscSiliconPNPPowerTransistor DESCRIPTION •Smallandslimpackage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Powerdissipation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Mediumpowertransistor(-32V,-2A) ●Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862. ●Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm 罗姆罗姆半导体集团 | ROHM |
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