首页 >2SB1123T/BFT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNPTransistor ■Features ●Lowcollector-to-emittersaturationvoltage. ●LargecurrentcapacityandwideASO. ●Fastswitchingspeed. ●Complementaryto2SD1623 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
PNP-SiliconGeneraluseTransistors PNP-SiliconGeneraluseTransistors 1W、1.5A、25V Applications：Canbeusedforswitchingandamplifyinginvarious electricalandelectroniccircuit. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | SKTECHNOLGY | ||
BipolarTransistor(??50V,(??2A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofFBET,MBITprocesses •Lowcollector-to-emittersaturationvoltage •LargecurrentcapacityandwideASO •Fastswitchingspeed •Theultraminiaturepackagefacilitateshigher-densitymounting,thusallowstheappliedhybridIC’sfurtherminiaturization Applicaitons • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
High-CurrentSwitchingApplications PNP/NPNEpitaxialPlanarSiliconTransistors Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittersaturationvoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. •Theultraminiaturepackagefacilitateshigher-densitymounting,thusallowstheapplied | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
BipolarTransistor(-)50V,(-)2A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofFBET,MBITprocesses •Lowcollector-to-emittersaturationvoltage •LargecurrentcapacityandwideASO •Fastswitchingspeed •Theultraminiaturepackagefacilitateshigher-densitymounting,thusallowstheappliedhybridIC’sfurtherminiaturization Applicaitons • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
High-CurrentSwitchingApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
High-CurrentSwitchingApplications ■Features ●Lowcollector-to-emittersaturationvoltage. ●LargecurrentcapacityandwideASO. ●Fastswitchingspeed. ●Complementaryto2SD1623 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
High-CurrentSwitchingApplications PNP/NPNEpitaxialPlanarSiliconTransistors Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittersaturationvoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. •Theultraminiaturepackagefacilitateshigher-densitymounting,thusallowstheapplied | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
High-CurrentSwitchingApplications PNP/NPNEpitaxialPlanarSiliconTransistors Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittersaturationvoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. •Theultraminiaturepackagefacilitateshigher-densitymounting,thusallowstheapplied | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN |
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