首页 >2SA949-A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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iscSiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-150V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=-0.8V(Max)@IC=-10mA APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Driver-StageAudioAmplifierApplicationsHigh-VoltageSwitchingApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TRANSISTOR(DRIVERSTAGEAUDIOAMPLIFIER,HIGHVOLTAGESWITCHINGAPPLICATIONS) Driver-StageAudioAmplifierApplications High-VoltageSwitchingApplications •Highbreakdownvoltage:VCEO=−150V •Lowoutputcapacitance:Cob=5.0pF(max) •Hightransitionfrequency:fT=120MHz(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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