首页 >2SA812三极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconEpitaxialPlanarTransistor FEATURES ●Commplementaryto2SC1623. ●HighDCcurrentgain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V. APPLICATIONS ●Audiofrequency,generalpurposeamplifier. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
SiliconEpitaxialPlanarTransistor | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
SiliconPNPtransistorinaSOT-23PlasticPackage Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Complementarypairwith2SC1623. Applications Audiofrequencyamplifierapplication. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
Plastic-EncapsulateTransistors FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | HOTTECH | ||
Plastic-EncapsulateTransistors Features: 1.hFEishigh,hFE=200(TYP)VCE=-6V,IC=-1mA; 2.Highvoltage,VCEO=-50V; Applications: Forgeneralamplification,itiscomplementaryto2SC1623. | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三联盛科技股份深圳市三联盛科技股份有限公司 | SHENZHENSLS | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES •Complementaryto2SC1623 •HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) •HighVoltage:Vceo=-50V | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
SiliconEpitaxialPlanarTransistor | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
PNPGeneralPurposeTransistor ■FEATURES PNPGeneralPurposeTransistor | GSMEGuilin Strong Micro-Electronics Co., Ltd. 桂微桂林斯壮桂微电子有限责任公司 | GSME | ||
TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.2W(Tamb=25℃) CollectorcurrentICM:-0.1A Collector-basevoltageV(BR)CBO:-60V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
SOT-23Plastic-EncapsulateTransistors FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ |
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