首页 >2SA733Y-EBC-D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Collector-BaseVoltage FEATURES Collector-BaseVoltage ComplementtoC945 | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司 | MAKOSEMI | ||
Collector-BaseVoltage:VCBO=-60V Features ●Collector-BaseVoltage:VCBO=-60V | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
SiliconEpitaxialPlanarTransistor FEATURES ●ExcellenthFELinearity. ●Powerdissipation：PD=250mW. ●HighhFE. APPLICATIONS ●Designedforuseindriverstageofamplifier. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
PNPEPITAXIALPLANARTRANSISTOR Description The2SA733isdesignedforuseindriverstageofAFamplifierapplications.. | TGS Tiger Electronic Co.,Ltd | TGS | ||
PNPPlasticEncapsulatedTransistor FEATURES •Complementaryofthe2SC945 •Collectortobasevoltage:-60V | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES Powerdissipation | DAYADaya Electric Group Co., Ltd. 大亚电器集团大亚电器集团有限公司 | DAYA | ||
TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR Description DesignedforuseindriverstageofAFamplifierapplicatioms. | DCCOM Dc Components | DCCOM | ||
PNPSILICONTRANSISTOR DESCRIPTION The2SA733isdesignedforuseindriverstateofAFamplifier. FEATURES ●HighhFEandExcellentLinearity:200TYP. hFE(VCE=-6.0V,IC=-1.0mA) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
PNPPlasticEncapsulatedTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
LOWFREQUENCYAMPLIFIERPNPEPITAXIALSILICONTRANSISTOR | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC |
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