2SA1832-Y-AP

Package：SOT-523；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.15A SOT523

2SA1832

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

2SA1832

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

2SA1832

Plastic-EncapsulateTransistors

FEATURES ●Highvoltageandhighcurrent. ●ExcellenthFElinearity. ●HighhFE. ●Complementaryto2sc4738. ●Smallpackage.

2SA1832

Plastic-EncapsulateTransistors

2SA1832

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:0.1W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SA1832

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

2SA1832

SOT-523Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Highvoltageandhighcurrent ●ExcellenthFElinearity ●Complementaryto2SC4738

2SA1832

PNPTRANSISTOR

FEATURES: Highvoltageandhighcurrent ExcellenthFElinearity HighhFE Complementaryto2SA1832

2SA1832

PNPSiliconPlasticEncapsulatedTransistor

FEATURES ●HighVoltageandHighCurrent ●ExcellenthFELinearity ●Complementaryto2SC4738