首页 >2SA1732-D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
High-SpeedSwitchingApplications High-SpeedSwitchingApplications Features •AdoptionofFBETprocesses. •Largecurrentcapacity. •Lowcollector-to-emittersaturationvoltage. •Fastswitchingspeed. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO |
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