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2SA1385

PNPSILICONEPITAXIALTRANSISTORMP-3

DESCRIPTION The2SA1385-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •LowVCE(sat):VCE(sat)=−0.18VTYP. •Complementto2SC3518-Z ​​​​​​​

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SA1385Z

PNPSILICONEPITAXIALTRANSISTORMP-3

DESCRIPTION The2SA1385-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •LowVCE(sat):VCE(sat)=−0.18VTYP. •Complementto2SC3518-Z ​​​​​​​

ETCList of Unclassifed Manufacturers

未分类制造商

2SA1385-Z

iscSiliconPNPPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage:V(BR)CEO=-60V(Min) •ExcellentlinearityofhFE •Lowcollector-to-emittersaturationvoltage •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforaudiofrequencypowerampli

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SA1385-Z

SILICONPOWERTRANSISTOR

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SA1385-Z

SiliconPNPEpitaxia

Features •LowVCE(sat):VCE(sat)=-0.18VTYP.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SA1385-Z

PNPSILICONEPITAXIALTRANSISTORMP-3

DESCRIPTION The2SA1385-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •LowVCE(sat):VCE(sat)=−0.18VTYP. •Complementto2SC3518-Z ​​​​​​​

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

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