首页 >2SA1296-Y(F)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.75W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-20V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●LowSaturationVoltage:VCE(sat) ●HighDCCurrentGain | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
PNPPlasticEncapsulatedTransistor FEATURES ●LowSaturationVoltage：VCE(sat) ●HighDCCurrentGain | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
PowerAmplifierApplicationsPowerSwitchingApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Plastic-EncapsulatedTransistors | TEL TRANSYS Electronics Limited | TEL | ||
TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS) PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=−0.5V(max)@IC=−2A •Complementaryto2SC3266. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TO-92Plastic-EncapsulateTransistors Features LowSaturationVoltage:VCE(sat) HighDCCurrentGain | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
TO-92Plastic-EncapsulateTransistors Features LowSaturationVoltage:VCE(sat) HighDCCurrentGain | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ |
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