2SA1213-O-AP

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 2A SOT89

2SA1213O-HF

GeneralPurposeTransistor

Features -Smallflatpackage. -Poweramplifierandswitchingapplications. -Lowsaturationvoltage. -Highspeedswitchingtime.

2SA1213PT

PNPEpitaxialTransistor

VOLTAGE50VoltsCURRENT2Ampere FEATURE *Smallflatpackage.(SC-62/SOT-89) *LowsaturationvoltageVCE(sat)=-0.5V(max.)(IC=-1A) *Highspeedswitchingtime:tstg=1.0uSec(typ.) *PC=1.0to2.0W(mountedonceramicsubstrate). *Highsaturationcurrentcapability. APPLICATION *Power

2SA1213SQ

PNPTransistor

2SA1213Y

PowerAmplifierApplications

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−1A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SC2873

2SA1213Y

GENERALPURPOSETRANSISTOR

2SA1213-Y

PNPTransistors

Features ●LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-1A) ●HighSpeedSwitchingTime:tstg=1.0us(typ.) ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SC2873

2SA1213-Y

PNPTransistors

2SA1213-Y

PNPSiliconEpitaxialTransistors

2SA1213-Y

PNPSiliconEpitaxialTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •LowSaturationvoltage:VCE(sat)=0.5V(max.)(IC=1.0A) •Smallflatpackage •PC=1.0to2.0W(mountedonceramicsubstrate) •HighSpeedSwitchingTime:tstg=1.0µs(typ.) •EpoxymeetsUL