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2SA1163

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC2713 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

2SA1163

NewJerseySemi-ConductorProducts,

NewJerseySemi-ConductorProducts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2SA1163

SiliconPNPEpitaxialType

Features •Highvoltage. •Smallpackage. •HighhFE. •Lownoise.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SA1163

AudioFrequencyGeneralPurposeAmplifierApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

2SA1163

TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPUFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC2713 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

2SA1163-G

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SA1163-G-HF

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SA1163-GR

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC2713 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

2SA1163-L

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SA1163-L-HF

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

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