首页 >2SA1162-Y,LXGF(T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconPNPtransistorinaSOT-23PlasticPackage Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Highvoltageandcurrent,excellenthFElinearity,highhFE,lownoise,complementaryto2SC2712. Applications Audiofrequencygeneralpurposeamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
Plastic-EncapsulateTransistors FEATURES Lownoise:NF=1dB(Typ.),10dB(Max.) Complementaryto2SC2712. SmallPackage. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | HOTTECH | ||
PNPEPITAXIALSILICONTRANSISTOR PNPEPITAXIALSILICONTRANSISTOR LOWFREQRENCY,LOWNOISEAMPLIFIER •Complemento2SC2712 •Collector-current:Ic=-100mA Collector-EmillerVoltage:VCE=-45V | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
PNPGeneralPurposeTransistor FEATURES PNPGeneralPurposeTransistor | GSMEGuilin Strong Micro-Electronics Co., Ltd. 桂微桂林斯壮桂微电子有限责任公司 | GSME | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Lownoise ●Complementaryto2SC2712 ●SmallPackage | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SiliconEpitaxialPlanarTransistor | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Plastic-EncapsulateTransistors FEATURES .Lownoise .Complementaryto2SC2712 .SmallPackage | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
SiliconPNPEpitaxialTypeTransistor ■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN |
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