2SA1162-Y,LF

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.15A SMINI

Toshiba Semiconductor and Storage

2SA1162

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Highvoltageandcurrent,excellenthFElinearity,highhFE,lownoise,complementaryto2SC2712. Applications Audiofrequencygeneralpurposeamplifierapplications.

2SA1162

Plastic-EncapsulateTransistors

FEATURES Lownoise:NF=1dB(Typ.),10dB(Max.) Complementaryto2SC2712. SmallPackage.

2SA1162

PNPEPITAXIALSILICONTRANSISTOR

PNPEPITAXIALSILICONTRANSISTOR LOWFREQRENCY,LOWNOISEAMPLIFIER •Complemento2SC2712 •Collector-current:Ic=-100mA Collector-EmillerVoltage:VCE=-45V

2SA1162

PNPGeneralPurposeTransistor

FEATURES PNPGeneralPurposeTransistor

2SA1162

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Lownoise ●Complementaryto2SC2712 ●SmallPackage

2SA1162

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.),

2SA1162

SiliconEpitaxialPlanarTransistor

2SA1162

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.),

2SA1162

Plastic-EncapsulateTransistors

FEATURES .Lownoise .Complementaryto2SC2712 .SmallPackage