首页 >2SA1162-GRLF(T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNPSiliconPlastic-EncapsulateTransistor Features •Capableof0.15WattsofPowerDissipation. •Collector-current:0.15A •Collector-baseVoltage:-50V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •LeadFreeFinish/RoHS | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
PNPSiliconPlastic-EncapsulateTransistor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
PNPTransistors ■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
PNPTransistors ■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
PNPSiliconPlastic-EncapsulateTransistor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN |
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