2N7002KW-AU

60VN-ChannelEnhancementModeMOSFET–ESDProtected

Features RDS(ON),VGS@10V,ID@500mA

2N7002KW-CAR

N-ChannelMOSFET

FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcap

2N7002KWQ

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002KX

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance (RDS(ON))andyetmaintainsuperiorswitchingperformance,makingit idealforhighefficiencypowermanagementapplications. Applications MotorControl PowerManagementFunctions Backlighting Features

2N7002L

SmallSignalMOSFET60V,115mA,N-ChannelSOT-23

SmallSignalMOSFET60V,115mA,N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable

2N7002L

60V,115mA,N-CHANNELMOSFET

2N7002L

SmallsignalMOSFET

2N7002L

SmallSignalMOSFET

2N7002L

MOSFET–N-Channel,SmallSignal,SOT-2360V,115mA

Features •2VPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable(2V7002L) •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant

2N7002LL

60V,115mA,N-CHANNELMOSFET

DESCRIPTION TheUTC2N7002LLusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. „FEATURES *RDS(ON)=7.5Ω@VGS=10V *LowReverseTransferCapacitanc