2N6353数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This specification covers the performance requirements for NPN silicon power Darlington, 2N6350, 2N6351, 2N6352 and 2N6353 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/472. One level of product assurance (JANHC) is provided for each unencapsulated device type as specified in MIL-PRF-19500/472. The device package outlines are as follows: 4-pin TO–33 for device types 2N6350 and 2N6351 and 3-pin TO–66 for device types 2N6352 and 2N6353.

简介

2N6353属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N6353晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。