2N6341数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

The Power 25A 150 VBipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications.

特性 Features

• High Collector-Emitter Sustaining VoltageVCEO(sus) = 100 Vdc (Min)2N6338 VCEO(sus) = 150 Vdc (Min) - 2N6341
• High DC Current GainhFE = 30 - 120 @ IC = 10 AdchFE = 12 (Min) @ IC = 25 Adc
• Low Collector-Emitter Saturation VoltageVCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
• Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ts = 1.0 µs (Max) tf = 0.25 µs (Max)
• These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

简介

2N6341属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N6341晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。