2N6213中文资料PNP Silicon High-Power -60V to -80V, -2A数据手册Microchip规格书

描述 Description

This specification covers the performance requirements for PNP silicon, high-voltage, 2N6211, 2N6212, 2N6213 and 2N6213A transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/461. Two levels of product assurance are provided for each unencapsulated device (JANHC and JANKC). The device package outlines are as follows: TO-66 for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/461.

简介

2N6213属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N6213晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。