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2N5879

COMPLEMENTARYSILICONPOWERTRANSISTORS

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS ...designedforgeneral-purposepoweramplifierandswitchingapplications. ●Collector-EmitterSustainingVoltage- VCEO(sus)=60Vdc(Min)-2N5879,2N5881 =60Vdc(Min)-2N5880,2N5882 ●DCCurrentGain- hFE=20

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2N5879

SiliconPNPPowerTransistors

SAVANTIC

Savantic, Inc.

2N5879

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Complementtotype2N58812N5882 APPLICATIONS •Forgeneral-purposepoweramplifier andswitchingapplications

SAVANTIC

Savantic, Inc.

2N5879

PowerTransistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分类制造商

2N5879

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Complementtotype2N58812N5882 APPLICATIONS •Forgeneral-purposepoweramplifier andswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2N5879

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

General-PurposePowerAmplifierandSwitchingApplications FEATURES: *LowCollector-EmitterSaturationVoltage- VCE(SAT)=1.0V(Max.)@IC=7.0A *ExecllentDCCurrentGain- hFE=10~100@IC=6.0A

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

2N5879

POWERTRANSISTORS(15A,160W)

General-PurposePowerAmplifierandSwitchingApplications FEATURES: *LowCollector-EmitterSaturationVoltage- VCE(SAT)=1.0V(Max.)@IC=7.0A *ExecllentDCCurrentGain- hFE=10~100@IC=6.0A

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

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