2N5796中文资料PNP Silicon Daul -60V, -0.6A数据手册Microchip规格书

描述 Description

This specification covers the performance requirements for two electrically isolated, PNP silicon, 2N5795 and 2N5796 unitized, dual 2N2907A transistors as one dual unit for high speed saturated switching applications. Both matched and unmatched types are covered. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/496. Provisions for radiation hardness assurance (RHA) are provided for JANTXV and JANS product assurance levels. RHA level designators \"M\", \"D\", \"P\", \"L\", \"R\", \"F\", \"G\" and \"H\" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: through hole mount TO-78 package and surface mount LCC6 (U) and ceramic lid surface mount LCC package.

简介

2N5796属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N5796晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。