首页 >2N5551S-RTK/P>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNGeneral-PurposeAmplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TO-92Plastic-EncapsulateTransistors Features GeneralPurposeSwitchingApplication | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
NPNGeneral-PurposeAmplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FAIRCHILDSmallSignalTransistors | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNGeneral-PurposeAmplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FAIRCHILDSmallSignalTransistors | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNGeneral-PurposeAmplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNEPITAXIALPLANARTRANSISTOR | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM | ||
TheG2N5551isdesignedforgeneralpurposeswitchingandamplifierapplications. | ETLE-Tech Electronics LTD 亚历电子亚历电子有限公司 | ETL | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheH2N5551isdesignedforamplifiertransistor. Features •ComplementstoPNPTypeH2N5401 •HighCollector-EmitterBreakdownVoltage(VCEO>160V(@IC=1mA)) | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
