Bipolar PNP Device in a Hermetically sealed TO66

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SEME-LAB

Bipolar Junction Transistors

TT Electronics

1 AMPERE POWER TRANSISTORS PNP SILICON

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar PNP Device in a Hermetically sealed TO66

文件：16 Kbytes 页数：1 Pages

SEME-LAB

isc Silicon PNP Power Transistor

DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -250V(Min) ·High Switching Speed ·High Current-Gain Bandwidth Product- : fT= 60MHz(Min)@ IC= -0.1A APPLICATIONS ·Designed for high voltage switching and amplifier applications.

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ISC

无锡固电