2N5115UB中文资料Field Effect Transistor FET P-Channel -30V, -0.015A to -0.6A数据手册Microchip规格书

描述 Description

This specification covers the performance requirements for P-channel, junction, silicon field-effect, 2N5114 Through 2N5116 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/476.

特性 Features

The device package outlines are as follows: similar to TO-18 and surface mount LCC3 UB for all encapsulated device types.

简介

2N5115UB属于分立半导体产品的晶体管-JFET。由制造生产的2N5115UB晶体管 - JFET结栅场效应晶体管 (JFET) 是用作电子控制开关、放大器或电压控制电阻器的器件。在栅极端子与源极端子之间施加适当极性的电势差就会增加电流流动的阻力，这意味着源极端子与漏极端子之间通道中流动的电流会更少。由于电荷流过源极与漏极端子之间的半导体通道，因此 JFET 不需要偏置电流。